p-channel enhancement mode vertical dmos fet issue 2 C march 94 features * 60 volt v ds *r ds(on) =5 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -60 v continuous drain current at t amb =25c i d -280 ma pulsed drain current i dm -4 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -60 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v id=-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -0.5 -100 m a m a v ds =-60 v, v gs =0 v ds =-48 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -1 a v ds =-18 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 5 w v gs =-10v,i d =-500ma forward transconductance (1)(2) g fs 150 ms v ds =-18v,i d =-500ma input capacitance (2) c iss 100 pf common source output capacitance (2) c oss 60 pf v ds =-18v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 20 pf turn-on delay time (2)(3) t d(on) 7ns v dd ? -18v, i d =-500ma rise time (2)(3) t r 15 ns turn-off delay time (2)(3) t d(off) 12 ns fall time (2)(3) t f 15 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. ( 3 ) s wi tc hin g t im es m easu r ed wi t h 50 w sou r ce im peda n ce a n d < 5 n s ri se t im e o n a pu l se ge n e r ato r e-line to92 compatible ZVP2106A 3-417 d g s typical characteristics output characteristics v ds - drain source voltage (volts) i d( o n ) - on- sta te dr ain cur r e n t ( am ps) transfer characteristics normalised r ds(on) and v gs(th) vs temperature normalised r d s ( o n) a nd v g s (th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 dr ai n - s o u rc e r e s i s ta n c e r ds( o n ) g ate t h res h o l d v o l t ag e v gs ( t h) i d=- 0.5a 0-2 -4-6-8-10 0 -10 -20 -30 -40 -50 saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) -10v i d( o n ) - on-state drain current (amps) v gs- gate source voltage (volts) v gs= -10v i d= -1ma v gs= v ds -3.5 -3.0 -2.0 -0.5 0 -1.0 -2.5 -1.5 2.6 180 v gs= -20v -14v -5v -6v -7v -4v -3.5v -8v v gs = -18v i d(o n ) -on-state drain current (amps) v ds - drain source voltage (volts) on-resistance v drain current i d -drain current (amps) r ds(on) -drain source resistance ( w ) -0.1 -1.0 10 5 -2.0 -12v -6v -4v 0 -2 -4 -6 -8 -10 1 -10v -9v -8v -7v -5v -9v 0 -0.6 -0.4 -0.2 -0.8 -1.6 -1.4 -1.2 -1.0 -1.8 -2.0 0 -10 -6 -2 -4 -8 0-2 -4 -6 -8 -10 i d= -1a -0.5a -0.25a -0.8 -0.6 -0.2 -0.4 v ds= -10v -1.6 -1.4 -1.0 -1.2 -6v -7v v gs =-5v -8v -10v -9v t j -junction temperature (c) ZVP2106A 3-418
p-channel enhancement mode vertical dmos fet issue 2 C march 94 features * 60 volt v ds *r ds(on) =5 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -60 v continuous drain current at t amb =25c i d -280 ma pulsed drain current i dm -4 a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -60 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -3.5 v id=-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -0.5 -100 m a m a v ds =-60 v, v gs =0 v ds =-48 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -1 a v ds =-18 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 5 w v gs =-10v,i d =-500ma forward transconductance (1)(2) g fs 150 ms v ds =-18v,i d =-500ma input capacitance (2) c iss 100 pf common source output capacitance (2) c oss 60 pf v ds =-18v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 20 pf turn-on delay time (2)(3) t d(on) 7ns v dd ? -18v, i d =-500ma rise time (2)(3) t r 15 ns turn-off delay time (2)(3) t d(off) 12 ns fall time (2)(3) t f 15 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. ( 3 ) s wi tc hin g t im es m easu r ed wi t h 50 w sou r ce im peda n ce a n d < 5 n s ri se t im e o n a pu l se ge n e r ato r e-line to92 compatible ZVP2106A 3-417 d g s typical characteristics output characteristics v ds - drain source voltage (volts) i d( o n ) - on- sta te dr ain cur r e n t ( am ps) transfer characteristics normalised r ds(on) and v gs(th) vs temperature normalised r d s ( o n) a nd v g s (th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 dr ai n - s o u rc e r e s i s ta n c e r ds( o n ) g ate t h res h o l d v o l t ag e v gs ( t h) i d=- 0.5a 0-2 -4-6-8-10 0 -10 -20 -30 -40 -50 saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) -10v i d( o n ) - on-state drain current (amps) v gs- gate source voltage (volts) v gs= -10v i d= -1ma v gs= v ds -3.5 -3.0 -2.0 -0.5 0 -1.0 -2.5 -1.5 2.6 180 v gs= -20v -14v -5v -6v -7v -4v -3.5v -8v v gs = -18v i d(o n ) -on-state drain current (amps) v ds - drain source voltage (volts) on-resistance v drain current i d -drain current (amps) r ds(on) -drain source resistance ( w ) -0.1 -1.0 10 5 -2.0 -12v -6v -4v 0 -2 -4 -6 -8 -10 1 -10v -9v -8v -7v -5v -9v 0 -0.6 -0.4 -0.2 -0.8 -1.6 -1.4 -1.2 -1.0 -1.8 -2.0 0 -10 -6 -2 -4 -8 0-2 -4 -6 -8 -10 i d= -1a -0.5a -0.25a -0.8 -0.6 -0.2 -0.4 v ds= -10v -1.6 -1.4 -1.0 -1.2 -6v -7v v gs =-5v -8v -10v -9v t j -junction temperature (c) ZVP2106A 3-418
typical characteristics transconductance v drain current i d - drain current (amps ) g fs - t ra n sc o ndu c t a nce (ms) 0 q-charge (nc) transconductance v gate-source voltage v gs -gate source voltage (volts) g f s -t rans c o n ductance (ms) 0-10-20-30 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capacitance (pf) c oss v g s - gate sou r ce v oltag e ( v o lts ) gate charge v gate-source voltage -6 -8 -10 -14 -16 -12 -4 -2 0 v ds = -20v -30v -50v -40 -50 0.2 0.4 0.6 0.8 1.0 1.2 40 20 0 60 c iss c rss 80 100 1.4 1.6 1.8 2.0 2.2 2.4 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 0 v ds= -10v 200 150 100 50 250 300 0 -2 -4-6-8-10 0 v ds= -10v 200 150 100 50 250 300 ZVP2106A 3-419
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